Abstract
Magnetic-field dependence of the resistivities in MnAs(11¯00) films on GaAs(001) and MnAs(0001) films on GaAs(111)B is investigated at low temperatures. Correspondence of the features in the longitudinal and transverse resistivities under reorientations of the magnetization enables us to distinguish the anisotropic magnetoresistance effect from the effects originating from the band structure of MnAs. Simultaneous contributions of holes and electrons are evidenced for the (11¯00)-oriented films, whereas the transport is almost completely dominated by holes for the (0001)-oriented films. The magnetization flip by an in-plane magnetic field applied along the magnetic easy axis generates jumps in the longitudinal resistivity owing to the magnetoresistance originating from the band-structure effect.
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