Abstract
We report magnetotransport properties of electrons in a new kind of two-dimensional electron system (2DES)—a narrow single quantum well with electron density so large that the electrons splash out of the well. We show that the system is a two-component 2D electron gas consisting of very low mobility (μ=×10 3 cm 2 V −1 s −1) main part of the electrons and very small fraction (about 1% of all) of the electrons with much higher (10 times) mobility. The anomalous behavior of the magnetoresistance ρ xx and Hall resistance ρ xy of this system was observed. The sharp change of the transport properties at the moment of overfilling of the quantum well gives the possibility to determine the value of the band offset Δ E c on the interface Al 0.3Ga 0.7As/GaAs using the results of the self-consistent calculation of the energy diagram of the studied structure. As the result we have obtained Δ E c=(0.18–0.20)eV. This value is significantly less than the well-known ΔE c =0.24 eV found in optical experiments.
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