Abstract
This paper reviews magnetotransport properties of concentrated and diluted magnetic semiconductors, including rare earth chalcogenides, mixed valence manganite perovskites, and the magnetically doped III–V semiconductors. The dependence of resistivity on state of magnetization leads in several cases to greater than 12 orders of magnitude decreases in resistivity near the magnetic transition temperature. The concept of the magnetic polaron is introduced and offers a reasonable explanation for many of these effects. Limitations of these materials as magneto-resistive sensors will be discussed. Several novel device geometries based on non-magnetic semiconductors, which hold considerable promise for a wide variety of sensor applications will also be mentioned.
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