Abstract
Thin films of ferromagnet Fe2Ge were grown via molecular beam epitaxy, and their electrical and magneto-transport properties were measured for the first time. X-ray diffraction and vibrating sample magnetometry measurements confirmed the crystalline ferromagnetic Fe2Ge phase. The observed high-temperature maximum in the longitudinal resistivity, as well as the observed suppression of electron–magnon scattering at low temperatures, points to the presence of strong spin polarization in this material. Measurements of the Hall resistivity, ρxy, show contributions from both the ordinary Hall effect and the anomalous Hall effect, ρxyAH, from which we determined the charge carrier concentration and mobility. Measurements also show a small negative magnetoresistance in both the longitudinal and transverse geometries. Fe2Ge holds promise as a useful spintronic material, especially for its semiconductor compatibility.
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