Abstract
We present an investigation on the transport and magnetotransport properties of thin Co films deposited onto Si substrates with a thin native oxide layer. We observed a marked transition on the transport properties of our films at ∼250 K . Around this temperature the conduction changes from electronic to hole-like and the resistance undergoes a clear drop. This effect can be explained by a conduction channel switching from the upper metallic film to the Si hole inversion layer as we increase the sample temperature. We show that this channel switching may be controlled by applying an external bias to the structure.
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