Abstract
A novel strategy of sub-rapid directional solidification is developed for preparing doped FeGa single crystals. Crystals of nominal composition Fe83Ga17Tbx (x=0, 0.05) have been grown with [100] preferred orientation at a high growth rate of 3000mm/h. Using this method, trace amounts of normally-insoluble Tb can be incorporated into the A2 Fe83Ga17 matrix. A large magnetostriction (λ100) of 310ppm is achieved in the [100] oriented Fe83Ga17Tb0.05 single crystal, ~50% higher than that of a similar undoped crystal.
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