Abstract
ABSTRACTMagnetostriction and thin film stress have been studied in high moment single layer FeTaN films deposited by high rate reactive dc magnetron sputtering. Low Magnetostriction (Magnitude less than 1 × 10-6) can be obtained over a fairly large range of nitrogen flow rates during film deposition by vacuum annealing at 500°C. After annealing at 500°C for two hours, all films were found to be in a state of tensile stress. Stress versus temperature measurements up to 400°C show film stress in as-deposited films to be highly hysteretic during the first temperature cycle reflecting the films' processing history. Stress-temperature cycles on annealed samples indicate that extremely stable films are produced in an intermediate range of nitrogen content.
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