Abstract
Electron spin resonance (ESR) is a natural candidate for quantum bit manipulation, provided that the confinement of a small number of electrons in a sufficiently small volume can be achieved. An important step is the development of low carrier density materials and structures in which the electron spins are isolated and can be controlled by ESR. We report on the realization of three low-density (n/sub 1/=1.77/spl times/10/sup 10/, n/sub 2/=4.5/spl times/10/sup 10/, and n/sub 3/=9/spl times/10/sup 10/ cm/sup -2/ without the help of a gate to deplete the channel) two-dimensional electron systems in GaAs-AlGaAs single quantum wells (QWs) and on the magnetoresistively detected electron spin resonance (MDESR) measurements in these samples. The MDESR has been characterized at /spl nu/=1 and /spl nu/=3 and the current intensity, microwave power, and temperature dependence have been studied. The structures that have been investigated represent the lowest density single QW samples in which MDESR has been detected. The implications of detection of the MDESR at such low electron density to coupled quantum-dot spin device technology will be presented.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
