Abstract
An introduction to magnetoresistance (AMR, GMR and TMR) effects is given, as well as an overview of their application in sensors and Magnetic Random Access Memory (MRAM). Different areas of sensor applications are discussed, including automotive sensors, current sensors and input devices. Presently, there is a large interest in the development of MRAM, since this new type of solid-state memory may be able to replace several types of conventional memories. Because MRAM promises to be nonvolatile, fast and dense, it could enable e.g. “instant-on” computers and portable devices with a much longer standby time. The MRAM technology also offers possibilities for the realization of compact, high-sensitivity, low-cost, multi-analyte biosensors.
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