Abstract
Focused ion beam (FIB) is used to implant Ga+ ions into a 30-nm thick magnetoresistive element to effectively reduce the track width of the sensor from 1 µm to ~80 nm. Through magnetic recording industry-standard spinstand measurements, it is confirmed that a dose of ~103 ions/cm2 at a 1-pA FIB current is sufficient to fully “de-activate” magnetism in the exposed side regions. To record tracks required for spinstand tests, a FIB-trimmed ring type write head is used.
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