Abstract
In this work, the magnetoresistance technique is used to perform mobility measurements in fully-depleted silicon-on-insulator (FDSOI) MOSFETs. This technique has the advantage of allowing the measurement of carrier mobility from weak to strong inversion without the knowledge of the effective channel length. The mobility dependence on the temperature enables us to analyse the scattering mechanisms in the channel. A new method exploiting the use of magnetoresistance technique to eliminate series resistance effect from the extracted mobility is proposed. The influence of series resistance on the mobility values in weak and strong inversion is then analysed.
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