Abstract
The magnetic-field dependences of the electrical resistivity Δρ/ρ0(Η) of the textured polycrystal Bi95.69Mn3.69Fe0.62 have been studied for the first time, for the H⊥I and H || I configurations at temperatures 5, 80, 150, and 300 K. It has been established that the Δρ/ρ0(Η) dependences significantly differ from those obtained for pure bismuth due to the influence of the internal magnetism of the α-BiMn phase inclusions on the behavior of charge carriers in the bismuth matrix. The maxima of Δρ/ρ0(Η) at H ≈ 30 and ≈ 40 kOe have been found, for the longitudinal and transverse magnetoresistance, respectively. These maxima may be related to reaching the quantum limit in the material we have studied.
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