Abstract
We report unconventional oscillatory tunnel magnetoresistance as a function of applied bias in the magnetic tunnel junction with the Al 2O 3 barrier. We attribute this feature to the inhomogeneity of the potential barrier structure. Ferromagnetic grains inside the potential barrier are formed at the technological stage. In this case, the TMR oscillation occurs due to the discrete charging effect that is well known as the Coulomb blockade.
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