Abstract
We fabricated a 50-nm-wide GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As multiple-quantum-wire structure with the cleaved-edge overgrowth technique and investigated the characteristics of its low-temperature magnetoresistances. A clear Shubnikov--de Haas oscillation was observed and found to contain unexpected oscillatory components. By analyzing the magnetoresistance and its temperature dependence, the formation of one-dimensional subbands was revealed. On the basis of a semiclassical model, the width of lateral confinement was estimated and found to be \ensuremath{\sim}50 nm.
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