Abstract
Large positive magnetoresistance was observed in Co-doped thin ZnO films at low temperatures and analyzed in the frame of the model based on the exchange interaction between the conduction electrons and the electrons of a magnetic impurity for the films with temperature dependence of resistivity described by Mott’s law. Estimates of the localization length of electronic states participating in hopping conduction were obtained. The obtained values of the localization length are close to the effective Bohr radii of shallow donors in ZnO.
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