Abstract
n-AlGaAs/GaAs two-dimensional electron gas (2DEG) thin wire with a width of 300 nm and an inelastic scattering length of 1000 nm is fabricated and its electronic properties are studied. n-AlGaAs/GaAs 2DEG is grown by low pressure metal organic chemical vapor-phase deposition. Thin wire is fabricated by holographic exposure and wet etching. The magnetic field dependence of the 2DEG thin wire conductance changes in the weak magnetic field region and an anisotropy appears in the conductance when the lowest cyclotron radius is equal to the width of the thin wire. It is found that the cyclotron radius determines the crossover from two dimensions to one dimension. The oscillation properties of Shubnikov-De Haas and quantum Hall effect of 2DEG wire are different from those in the conventional 2DEG. This abnormal oscillation is a property of a finite size system, the length of which is comparable to the inelastic scattering length.
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