Abstract
The magnetoresistance (MR) of Fe3O4-graphene-Fe3O4 junctions has been experimentally studied at different temperatures. It is found that a barrier exists at the Fe3O4/graphene interface. The existence of the interfacial barrier was further confirmed by the nonlinear I-V characteristics and nonmetallic temperature dependence of the interfacial resistance. Moreover, spin dependent transport at the interfaces contributes −1.6% MR to the whole device at room temperature and can be regulated by an external electric field.
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