Abstract
A new type of magnetoresistance (MR) was observed in FeSiO 2 granular films. The samples were prepared on glass substrates using ion-beam sputtering technique. MR ratios of the order of 2.7% at room temperature and 4.5% at 210 K were obtained when a magnetic field of 1.2 T was applied parallel to the film plane. We have measured MR as a function of Fe volume fraction ( f V ) of the films. It was found that MR appears only in samples with f V less than the percolation threshold ( f C ) and has a peak value at f V ≈ 0.28. We also found that the enhancement of MR always appears together with the increase of resistance ( R) of samples in the region 0.28 ≤ f V < 0.5. Our results indicate that MR in these materials arises from the spin-dependent tunneling effect and imply that the size of Fe particles and the thickness of SiO 2 tunnel barriers may play an important role in the MR effect of FeSiO 2 granular films.
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