Abstract
Thin films of InAs were deposited on mica substrates by means of controlling both source and substrate temperatures. The temperature and geometry dependence of the magnetoresistance for these films were investigated. A continuous range of behavior was observed from films of high electron mobility-low magnetoresistance at one extreme to those of low mobility-high magnetoresistance at the other. The latter type is shown to be due to excess indium which is occluded during evaporation as a result of the lower vapor pressure of arsenic.
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