Abstract
Transverse magnetoresistance in n-type conductivity Te:GaSb whiskers with different impurity concentration that correspond to metal side of the metal-insulator transition were studied in the range of magnetic field 0 ÷ 14 T at low temperatures 1.5 ÷ 100 K. The presence of negative magnetoresistance in Te:GaSb whiskers with resistivity 0.0036 Ohm×cm was observed and associated with weak localization. The magnetoresistance studies of Te:GaSb whiskers revealed the crossover from weak localization to weak antilocalization in the temperature range 1.5 ÷ 4.2 K and magnetic field below 1 T. GaSb whiskers are prospective material for magnetic sensors operating in the wide ranges of magnetic field up to 14 T and temperature 100 ÷ 300 K according to the obtained results from magnetoresistance studies.
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