Magnetoresistance of aluminium computed by the path-integral method

Abstract

The field dependence of the magnetoresistance of aluminium is computed by the path-integral method on the basis of the 4-OPW Fermi surface (FS) model. The published data of electron-phonon relaxation time at 20 K and those of electron-Ag impurity scattering time are introduced. The computed magnetoresistance is highly enhanced by the anisotropy in the relaxation time. The results obtained explain the previously discovered anomalous dependence of the magnetoresistance on temperature and impurity concentration tolerably well.