Magnetoresistance in Sn-Doped In2O3Nanowires

Olívia M Berengue,Livia P Pozzi,Adenilson J Chiquito,Alexandrejc Lanfredi,Edson R Leite,Joséfq Rey

doi:10.1007/s11671-009-9336-4

Olívia M Berengue, Livia P Pozzi + Show 4 more

Open Access

https://doi.org/10.1007/s11671-009-9336-4

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Abstract

In this work, we present transport measurements of individual Sn-doped In2O3nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures.

Highlights

Quasi 1D metal oxide nanostructures have attracted considerable interest in the last years for fundamental studiesA
The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K
Since the ITO nanowires are expected to remain metallic, the carrier density is a weak function of temperature and the resistance should be mainly determined by the temperature dependence of the various scattering mechanisms through electrons’ mobility [6]

Summary

Introduction

Quasi 1D metal oxide nanostructures have attracted considerable interest in the last years for fundamental studiesA. Keywords Oxide nanowires Á Weak localization Á Electron transport Á Electron–electron scattering In this work we present some transport measurements of individual Sn-doped In2O3 nanowires as a function of temperature and magnetic field.

Results

Conclusion