Abstract
Summary form only given. Recently-proposed spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs) are expected to be key devices for advancing the integrated circuit technology beyond the CMOS scaling. Towards the integration of spin MOSFETs with a CMOS platform, experimental demonstration and critical understanding of output characteristics are strongly needed. In this paper, we present the magnetoresistance and spin transport in MOSFETs with ferromagnetic MnAs source/drain (S/D) contacts.
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