Abstract
Two different types of amorphous material, which includes CoFeB and Co/sub 2/MnSi alloy were examined for use as electrodes in magnetic tunnel junctions (MTJ) to achieve a high tunnel magnetoresistance (TMR) ratio. Films were grown in a Shamrock tool by dc magnetron cosputtering from elemental targets on glass substrates or thermal-oxidized Si substrates. Film compositions were checked by energy dispersive X-ray analysis in a scanning electron microscope. Structural, and magnetic characterization was performed by X-ray diffraction and in a %T superconducting quantum interference device (SQUID) magnetometer, respectively. In the amorphous MTJs, the tunneling spin-polarization does not reflect the magnitude of the net magnetic moment directly.
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