Magnetoresistance in LuBi and YBi semimetals due to nearly perfect carrier compensation

Abstract

Monobismuthides of yttrium and lutetium are shown as new representatives of materials which exhibit extreme magnetoresistance and magnetic-field-induced resistivity plateau. At low temperatures and in magnetic field of 9T the magnetoresistance attains the order of magnitude of 10,000% and 1,000%, on YBi and LuBi, respectively. Our thorough examination of electron transport properties of both compounds show that observed features are the consequence of nearly perfect carrier compensation rather than of possible nontrivial topology of electronic states. The field-induced plateau of electrical resistivity can be explained with Kohler scaling. Anisotropic multi-band model of electronic transport describes very well the magnetic field dependence of electrical resistivity and Hall resistivity. Data obtained from the Shubnikov-de Haas oscillations analysis also confirm that Fermi surface of each compound contains almost equal amounts of holes and electrons. First-principle calculations of electronic band structure are in a very good agreement with the experimental data.