Abstract
We report on the effect of alloy composition and temperature on the large positive magnetoresistance of p-In1−xMnxAs/n-InAs dilute magnetic semiconductor heterojunctions. The junction magnetoconductance with magnetic field and current parallel is well-described by an analytical expression for the total conductance Gtot of two spin split bands. From the junction, magnetoconductance an effective g-factor, due to a large Zeeman effect, was determined for varying Mn concentration. The effective g-factor increases with increasing Mn concentration from 98 to 131 for xMn = 0.01 to xMn = 0.06. There is an excellent agreement between the calculated curve for the g-factor and the experimentally derived values.
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