Abstract
We report spin transport through the silicon in novel magnetic junction with half metallic as free layer and metallic as pinned layer. We used La0.7Sr0.3MnO3 as free layer, FeCo as pinned layer and studied the magnetoresistance through silicon as spacer layer. We fabricated this magnetic tunnel junction using RF/DC sputtering technique over SrTiO3 substrate. Tunneling magnetoresistance (TMR) measurement for this junction at room temperature was found to be 1.1 %. At 2 K, we found a large magnetoresistance of 396 %. TMR found to be increased with decreasing temperature. The results are discussed.
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