Abstract
FeSi/Cu compositionally modulated amorphous films with different thicknesses of Cu layers have been obtained by radio-frequency sputtering. We studied the resistivity and magnetoresistance of these samples at room temperature. The resistivity of FeSi/Cu compositionally modulated films (CMFs) increases with decreasing the thickness of Cu layers. The FeSi/Cu CMFs show a negative magnetoresistance effect. The magnetoresistance decreases with decreasing the Cu layer thickness dc when dc is over 20 Å, but it turns to increase with decreasing dc when dc is below 20 Å. This is probably caused by the polarization of conductive electrons of Cu.
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