Magnetoresistance in bilayer graphene via ferromagnet proximity effects

Abstract

A drastic modification of electronic band structure is predicted in bilayer graphene when it is placed between two ferromagnetic insulators. Due to the exchange interaction with the proximate ferromagnet, the electronic energy dispersion in the graphene channel strongly depends on the magnetization orientation of two ferromagnetic layers, ${\mathbf{M}}_{1}$ and ${\mathbf{M}}_{2}$. While the parallel configuration ${\mathbf{M}}_{1}={\mathbf{M}}_{2}$ leads to simple spin splitting of both conduction and valence bands, an energy gap is induced as soon as the angle $\ensuremath{\theta}$ between ${\mathbf{M}}_{1}$ and ${\mathbf{M}}_{2}$ becomes nonzero with the maximum achieved at $\ensuremath{\theta}=\ensuremath{\pi}$ (i.e., antiparallel alignment). Consequently, bilayer graphene may exhibit a sizable magnetoresistance effect in the current-in-plane configuration. A rough estimate suggests that the resistance changes on the order of tens of percent is possible at room temperature. This effect is expected to become more pronounced as the temperatures decreases.