Abstract
Weak field magentoresistance anisotropies near room temperature were observed on n-type (001) Si on sapphire. They are M <100> <001> < M <100> <010> , M <100> <100> ∼0 and M <110> <110> > M <110> <001> > M <110> <\bar110> , where the superscript and subscript denote the magnetic field and the electric current directions, respectively. These anisotropies are well explained when it is assumed that the <001> energy ellipsoids make little contribution to conduction, the energy being raised relative to the <100> and <010> ellipsoids due to the large lateral strain induced by the thermal expansion coefficient difference.
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