Abstract
The magnetic and magnetotransport properties of multilayer Co0.45 Fe0.45Zr0.1/(a-Si) nanostructures with a 0.7-to 3.5-nm-thick amorphous silicon layer and a 2.5-to 3.5-nm-thick metal layer that are produced via ion-beam sputtering are investigated. It is demonstrated that the resistance of these structures depends on temperature as R xx ∝-log T, which is typical of metal/dielectric nanocomposites on the metal side of the percolation transition. A negative magnetoresistance (∼0.15%) is observed at a thickness of the amorphous silicon layers of no greater than 1 nm. This effect is related to spin-dependent electron transitions between the neighboring layers in the presence of the antiferromagnetic exchange interaction between them. Under the same conditions, a transverse (between the Hall probes) magnetoresistive effect amounts to 6–9%. This phenomenon is related to the anisotropic magnetoresistance and the planar Hall effect, which has not been observed in metal/dielectric nanocomposites in the vicinity of the percolation transition. It is demonstrated that a magnetic memory cell based on such a film structure with the induced magnetic anisotropy can be created.
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