Abstract
The reactive-sputtered polycrystalline Ti1−xCrxN films with 0.17≤x≤0.51 are ferromagnetic and at x=0.47 the Curie temperature TC shows a maximum of ~120K. The films are metallic at 0≤x≤0.47, while the films with x=0.51 and 0.78 are semiconducting-like. The upturn of resistivity below 70K observed in the films with 0.10≤x≤0.47 is from the effects of the electron–electron interaction and weak localization. The negative magnetoresistance (MR) of the films with 0.10≤x≤0.51 is dominated by the double-exchange interaction, while at x=0.78, MR is related to the localized magnetic moment scattering at the grain boundaries. The scaling ρxyA/n∝ρxx2.19 suggests that the anomalous Hall effect in the polycrystalline Ti1−xCrxN films is scattering-independent.
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