Magnetoplastic Effect in Te-Doped GaAs Single Crystals

Abstract

The influence of a dc magnetic field on the motion of growth dislocations with a density of (0.7–7.0) × 104 cm–2 and the electron density in the range of 5 × 1017–2.5 × 1018 cm–3 in Te-doped GaAs single crystals has been investigated. One experiment was performed with different magnetic field inductions (0.18, 0.33, and 0.50 T) and exposure time of 5 min. In another experiment the samples were subjected to a 0.50-T magnetic field for 3, 5, and 10 min. It is shown that the dislocations undergo the largest shift at the minimum magnetic field induction and the shortest treatment time. The maximum change in the electron density also occurs under these conditions. With the treatment time increase the dislocations tend to their initial positions and the electron density decreases.