Abstract
The conductivity describing magnetophonon resonances is calculated in monolayer graphene, with the Fermi level located near the Dirac point. Intervalley scattering due to zone-edge phonons gives dominant contribution to the conductivity compared to intravalley scattering due to zone-center optical phonons mainly because of lower frequency. Resonances are classified into three types, i.e., principal, symmetric, and asymmetric transitions. The magnetophonon oscillations due to the principal and symmetric transitions are periodic in inverse magnetic field, while those due to the asymmetric transitions are not precisely periodic. The amplitude of the oscillation is shown to be weakly dependent on magnetic field.
Highlights
Magnetophonon resonances (MPR) arise from resonant phonon emission and absorption by electrons in semiconductors in high magnetic field.1–4) MPR provides detailed information on carrier effective mass and phonon frequency at higher temperatures, typically between liquid nitrogen and room temperature
We theoretically investigate magnetophonon resonances in monolayer graphene considering zone-edge10,11) and zone-center10,12–16) optical phonons
For conventional group IV elements or group III–V. Compound semiconductors, such as Si and GaAs, magnetophonon resonances occur periodic in inverse magnetic field because the resonance takes place when the optical-phonon energy equals an integer multiple of the separation between nearest-neighbor Landau levels
Summary
Magnetophonon resonances (MPR) arise from resonant phonon emission and absorption by electrons in semiconductors in high magnetic field.1–4) MPR provides detailed information on carrier effective mass and phonon frequency at higher temperatures, typically between liquid nitrogen and room temperature. Ambipolar field-effect transistors of an atomically thin graphene were successfully fabricated.5) Since graphene has been a subject of considerable theoretical and experimental study6–9) and graphene-based electronic devices are considered as a promising candidate for future integrated circuits. In view of these developments, it is essential to obtain a deeper understanding of the role of electron–phonon interaction at higher temperatures. We theoretically investigate magnetophonon resonances in monolayer graphene considering zone-edge10,11) and zone-center10,12–16) optical phonons. We first consider the resonance condition in graphene before calculating the MPR conductivity. B B0 =4, symmetric transitions contribute to MPR with condition ðn > 0; m > 0Þ; ð10Þ
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