Abstract
An optical spectroscopy method for the investigation of two-dimensional (2D-) electron energy spectra in the regimes of the integral and fractional Quantum Hall Effect is considered. The structure of the Landau levels is studied both in (001)-Si-Metal-Oxide-Semi-conductor Field Effect Transistors (MOSFETs) and in GaAs-AlGaAs heterojunctions. It is shown that the spectrum of radiative recombination of 2D-electrons with photoexcited holes in the case of the (001)-Si-MOSFETs directly reflects the one-particle density of states of 2D-electrons. The magnitudes of the valley and the spin splittings are determined and it is shown that these splittings are very strongly enhanced by the exchange interaction effect. Oscillations of the Landau level width as a function of the electron filling factor are observed and it is demonstrated that this effect is due to the screening of long-range random potential fluctuations.
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