Abstract
The photoluminescence (PL) properties of undopeal InGaAs/InP quantum wires are studied in a magnetic field up to 16 T. The quantum wires are fabricated with a combination of electron-beam lithography, reverse mesa wet etching, and metal organic-vapour-phase epitaxy overgrowth. Here we report results on wires with a vertical width of 50 Å and lateral widths from 450 Å to 200 Å. The purpose of this work is to study the influence of a magnetic field on the quasi-one-dimensional subbands in a quantum wire. We have also studied many particle interactions in these quasi-one-dimensional semiconductor structures. A high carrier density is achieved by high intensity cw photo-excitation that is filling both conduction and valence bands states. In this way it is possible to observe several quasi-one-dimensional subbands and follow their evolution with increasing magnetic field and increasing electron-hole plasma density. We are able to follow how the quasi-one-dimensional subbands merge into quasi-two-dimensional Landau levels. One effect of the lateral barriers is the quenching of classical Landau-orbits with cyclotron-diameter wider than the wire width. By varying the pump intensity at 14 T we observe some intriguing wire width dependent many-body effects.
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