Abstract
We have performed magneto-photoluminescence experiments in several samples containing a layer of InAs with different thicknesses, ranging from 1.2 to 2.5ML, inserted inside a modulation doped GaAs SQW. We applied the magnetic field both parallel and perpendicular to the growth direction and analyzed the circular polarization of the emitted light. We show that between 1.4 and 2.1ML the observed PL can be associated with a lens shaped InAs SAQD, where the lateral confinement is not strong. We have observed no clear relation between the occurrence of the QHE in the underlying 2DEG and the optical properties of the lens shaped SADQ's, although a step like behavior of the PL peak energy occur around 6T, close to filling factor ν=2.
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