Abstract

A promising way to overcome power and temperature issues in optimizing the performance of microelectronic devices will take advantage of purely electric field-controlled devices with a minimum amount of Joule heating. Multiphase multiferroic and magnetoelectric materials are most promising, since they can be tailored according to the technical needs. Here, we focus onto electric switching of the exchange bias effect in Cr2O3/(Pt/Co/Pt) heterostructures thus controlling the magnetic states of spintronic devices such as MERAM and MEXOR.

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