Abstract
Engineered heterostructures designed for electric control of magnetic properties, the so-called magnetoelectric interfaces, present a novel route towards using the spin degree of freedom in electronic devices. Here, we review how a subset of such interfaces, namely ferromagnet-ferroelectric heterostructures, display electronically mediated control of magnetism and, in particular, emphasis is placed on how these effects manifest themselves as detectable spin-dependent transport phenomena. Examples of these effects are given for a variety of material systems on the basis of ferroelectric oxides, manganese and ruthenium magnetic complex oxides and elemental ferromagnetic metals. Results from both theory and experiment are discussed.
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