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Abstract
Magnetoelectric (ME) effect is a result of the interplay between magnetism and electric field and now, it is regarded as a principle that can be applied to the technique of controlling the antiferromagnetic (AFM) domain state. The ME-controlled AFM domain state can be read out by the magnetization of the adjacent ferromagnetic layer coupled with the ME AFM layer via exchange bias. In this technique, the reduction in the ME layer thickness is an ongoing challenge. In this paper, we demonstrate the ME-induced switching of exchange bias polarity using the 30-nm thick ME Cr2O3 thin film. Two typical switching processes, the ME field cooling (MEFC) and isothermal modes, are both explored. The required ME field for the switching in the MEFC mode suggests that the ME susceptibility (α33) is not deteriorated at 30 nm thickness regime. The isothermal change of the exchange bias shows the hysteresis with respect to the electric field, and there is an asymmetry of the switching field depending on the switching direction. The quantitative analysis of this asymmetry yields α33 at 273 K of 3.7 ± 0.5 ps/m, which is comparable to the reported value for the bulk Cr2O3.
Highlights
Controlling antiferromagnetic (AFM) domain has been an active pursuit because of the possible applications, such as ultrahigh density storage and THz devices
The former scenario is based on the fact that the ME-controlled AFM domain state is detectable via the FM magnetization with the assumption that the exchange bias polarity is coupled with the AFM domain state
Even at the most severe conditions adopted in this work, the current density is in the range of 102 A/m2, which is low enough compared with the current-induced magnetization switching, such as the spin-orbit torque mechanism, typically above 109 A/m2 [24,25]
Summary
Controlling antiferromagnetic (AFM) domain has been an active pursuit because of the possible applications, such as ultrahigh density storage and THz devices. The device architecture based on the former scenario was proposed by Chen et al, as ME-random access memory (ME-RAM) [9] The former scenario is based on the fact that the ME-controlled AFM domain state is detectable via the FM magnetization with the assumption that the exchange bias polarity is coupled with the AFM domain state. The above prerequisite has been proven experimentally by means of the element-specific magnetic domain observation [12] In this approach, the large output signal is expected so that the output voltage is determined by the FM magnetization direction. Based on the required field condition, we show that the ME susceptibility (α) is not deteriorated in the
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