Abstract
We prepared two-dimensional close-packed hemispherical CoFe2O4(CFO)/Pb(Zr0.52Ti0.48O3)(PZT)/LaNiO3(LNO)/NiO thin film on Si(100) substrate using a template made of monodispersed polymethyl methacrylate (PMMA) particles. LNO and NiO layers are introduced for the bottom electrode and seed to crystallize, respectively. Since this hemispherical thin film is connected with the substrate only at the “foot” of the hemisphere, this thin film has a hollow structure. Therefore we call this structure as “free-standing” thin film. In this work, we also prepared planar CFO/PZT/LNO/NiO thin film on Si(100) substrate without using the PMMA template for comparison. In this work, we examined the effect of applying a vertical external magnetic field on the ferroelectric property. It was found that applying an external magnetic field decreases remanent polarization (Pr) for both planar and free-standing thin film. The degree of decrease of Pr in the free-standing thin film is about four times larger than that in the planar thin film. This indicates that large multiferroic property (interaction between ferromagnetic and ferroelectric) is realized in the free-standing thin film.
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