Abstract
The interfacial magnetoelectric (ME) effect in ferromagnetic-ferroelectric (FM-FE) tunneling junctions was investigated in this work. We found that the tunneling magnetoresistance (TMR) changes with the reversing of the electric polarization of the FE barrier. The theoretical results also indicated that TMR is strongly dependent on the electric polarization, the exchange splitting energy, the screening lengths in the electrodes, and the dielectric constant of the FE barrier layer. These results may provide some insights into switching magnetization electrically for spintronics and presenting independent tunneling states in a single junction for multi-value storage memory applications.
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