Magnetoelectric coupling effect in Ga3+-doped Ca3CoMn1-xGaxO6 compounds

Abstract

The introduction of defects is the key method to control the multiferroic properties of one-dimensional frustration Ca3CoMnO6. In this work, we synthesized a series of Ga3+ doped Ca3CoMn1-xGaxO6 (x = 0, 0.05, 0.1, 0.2) compounds. Their crystallographic structure, magnetism as well as the dielectric properties were characterized. The XRD patterns verify the rhombohedral structure of all the samples. The Ga3+ ions have obvious inhibitory effect on the magnetic short-range order. With the substitution of Mn4+ by Ga3+, the polar nanodomains are inhibited and the diffusion index γ becomes lower. The same sign of Δε` and Δtanδ in magnetic field dependent permittivity suggests that the magnetoelectric coupling effect in Ca3CoMn1-xGaxO6 is intrinsic. For the Ca3CoMn1-xGaxO6 system, the freezing process is primarily dominated by the coupling of the polar nanodomains.