Abstract
Ba M-type ferrite films of composition BaFe11Zn0.5Zr0.5O19 were grown on MgO (111) substrates by pulsed laser deposition. Both Zn and Zr divalent ions were introduced to reduce the magnetic anisotropy field to ~7.5 kOe, or 46% lower than the parent Ba M-type compound. Temperature dependence of magnetization over 25 to 350°C was investigated, indicating a Curie temperature of 320°C. Ferromagnetic resonance linewidth, as the peak-to-peak power absorption derivative at 9.55 GHz, was 120 Oe. The substituted sample had a K1 of ~0.920 × 106 erg/cm3. Such sample properties provide an attractive option for self-biased microwave devices applications operating at X (8-12 GHz) and Ku bands (12-18 GHz) as circulators and isolators.
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