Abstract
The equivalent parallel capacitance and conductance of a metal - insulator - semiconductor (MIS) device prepared on low-concentration p-type exhibit, in an external magnetic field, well-resolved oscillations both as a function of gate voltage and magnetic field B, when biased into inversion. The oscillations result from a magnetic-field-induced modulation of the two-dimensional (2D) density of states (Landau levels) either in the inversion layer developed under the MIS gate contact (when measured at fixed B) or in the inverted surface under the passivating anodic oxide layer in the area surrounding the gate (when measured as a function of B with kept constant). The minority carrier transport mechanism is discussed and by using Fourier analysis of the observed oscillations, the number and partial occupancies of the 2D quantized subbands of the inverted surface layer are deduced. The shallow acceptor activation energy meV is evaluated from the observed carrier freeze-out.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
