Abstract
The resonant buildup and storage of electron space charge can be enhanced in appropriately designed devices to give intrinsic bistability in the I(V) characteristics. Magnetocapacitance and photoluminescence spectroscopy measurements are used to investigate this effect and to provide evidence for the sequential model of resonant tunneling. At high magnetic fields, the intrinsic bistability effect is greatly enhanced due to the high density of states available in a Landau level.
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