Abstract
We have investigated both red light (660 nm) and magnetic field (H) dependent carrier transport properties of ZnO-rGO/La0.7Sr0.3MnO3(LSMO)/ITO heterostructure at room temperature. H dependent current-voltage (I-V) response shows positive magnetoresistance behavior over the entire applied bias region. This phenomenon is attributed to larger spin dependent scattering of electrons at t↓2g band of LSMO depletion region with increase in H. Enhancement in device current with light intensity, at positive bias region and zero applied H, is supposed to be associated with dissociation of excitons at ZnO-rGO granular interface, ZnO-rGO/LSMO depletion region and LSMO active layer of the device. Device current is suddenly observed to decrease with light intensity at higher constant applied H of 1 kOe. Simultaneous light and magnetic field dependent modification of ZnO-rGO/LSMO depletion region is supposed to be the origin of such reversal of light dependent device current behavior at high magnetic field.
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