Abstract
Abstract Shubnikov-De Haas and Van der Pauw measurements at 4.2 K are presented for the two-dimensional electron gas in a selectively doped GaInAsInP heterostructure grown by MBE. Two sub-bands are clearly occupied and there is evidence for at least a third lying just below the Fermi energy. Upon applying hydrostatic pressure (up to 8.8 kbar) the mobility decreases by about 25%. This change in mobility is explained by the increase in the effective mass and by considering alloy scattering as the main mobility-limiting process.
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