Abstract
AbstractThe phase-breaking time τφ'. in thin α-FeSi2 films was obtained from the analyses of the lowtemperature magnetoresistance (MR). The films were grown by molecular beam epitaxy (MBE) on Si(111) and capped with epitaxial Si. The MR behavior is interpreted in terms of two-dimensional (2D) weak localization with strong spin-orbit interaction and electron-electron interaction (EEI). By fitting the MR data we obtained the temperature dependence of τφ. The results indicate the phase-breaking time to vary as T− over a large temperature range from 1.7 to 15 K, in agreement with the dependence predicted by the EET in 2D systems.
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