Abstract
Abstract Amorphous Ge 1− x Mn x thin films were grown in order to expand the solubility limit of Mn. The amorphous Ge 1− x Mn x thin films were grown on (1 0 0)Si substrate at 373 K by using a thermal evaporator. The solubility of Mn in amorphous Ge 1− x Mn x thin films reaches up to 17 at.%. The amorphous Ge 1− x Mn x thin films are ferromagnetic and the T C is ∼150 K. The largest saturation magnetization of amorphous Ge 1− x Mn x thin films is ∼100 emu/cm 3 for x = 0.118 at 5 K. The variation of electrical resistivity with respect to temperature reveals that the amorphous Ge 1− x Mn x thin films have semiconductor characteristics. The in-field electrical resistivity of amorphous Ge 1− x Mn x thin films is lower than the zero-field electrical resistivity when T T C , but the reverse is true when T > T C . However, the in-field electrical resistivity of amorphous Ge 1− x Mn x thin films is always higher than the zero-field electrical resistivity when x > ∼12 at.%. Magneto-transport characteristics of amorphous Ge 1− x Mn x thin films show anomalous Hall phenomenon and negative magnetoresistance when T T C . The results suggest that the Mn atoms in amorphous Ge 1− x Mn x thin films be related to spin dependent scattering depending on magnetization.
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